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| BYP 300 Preliminary data FRED Diode * Fast recovery epitaxial diode * Soft recovery characteristics Type BYP 300 VRRM 1200V IFRMS 6.5A trr 55ns Package TO-218 AD Ordering Code C67047-A2250-A2 Maximum Ratings Parameter Mean forward current Symbol Values 4 Unit A 6.5 15 IFAV IFRMS IFSM IFRM 40 i2dt 1.1 TC = 90 C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 C, f = 50 Hz Repetitive peak forward current Tj = 100 C, tp 10 s i 2t value Tj = 100 C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1200 1200 W 15 -40 ... + 150 -40 ... + 150 3.8 46 E 40 / 150 / 56 K/W C V VRRM VRSM Ptot Tj Tstg RthJC RthJA - TC = 90 C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 09.96 BYP 300 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit VF 2.3 2 0.01 0.05 0.15 3 - V IF = 4 A, Tj = 25 C IF = 4 A, Tj = 100 C Reverse current IR 0.25 - mA VR = 1200 V, Tj = 25 C VR = 1200 V, Tj = 100 C VR = 1200 V, Tj = 150 C AC Characteristics Reverse recovery charge Qrr 0.8 - C IF = 4 A, VCC = 300 V, diF/dt = -800 A/s Tj = 100 C Peak reverse recovery current IRRM 22 - A IF = 4 A, VCC = 300 V, diF/dt = -800 A/s Tj = 100 C Reverse recovery time trr 55 - ns IF = 4 A, VCC = 300 V, diF/dt = -800 A/s Tj = 100 C Storage time tS 30 0.8 - IF = 4 A, VCC = 300 V, diF/dt = -800 A/s Tj = 100 C Softfaktor S IF = 4 A, VCC = 300 V, diF/dt = -800 A/s Tj = 100 C Semiconductor Group 2 09.96 |
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